ss8p2l, ss8p3l vishay general semiconductor document number: 89001 revision: 24-nov-09 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 1 new product high current density surface mount schottky barrier rectifiers typical applications for use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. features ? very low profile - typical height of 1.1 mm ? ideal for automated placement ? low forward voltage drop, low power losses ? high efficiency ? low thermal resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition mechanical data case: to-277a (smpc) molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free and rohs compliant, commercial grade base p/nhm3 - halogen-free and rohs compliant, automotive grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test, hm3 suffix meets jesd 201 class 2 whisker test primary characteristics i f(av) 8.0 a v rrm 20 v, 30 v i fsm 150 a e as 20 mj v f at i f = 8.0 a 0.472 v t j max. 150 c to-277a (smpc) anode 1 anode 2 cathode k k 2 1 esmp tm series maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss8p2l ss8p3l unit device marking code s82 s83 maximum repetitive peak reverse voltage v rrm 20 30 v maximum average forward rectified current (fig. 1) i f(av) 8.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 150 a non-repetitive avalanche energy at i as = 2 a, t j = 25 c e as 20 mj operating junction and storage temperature range t j, t stg - 55 to + 150 c
new product ss8p2l, ss8p3l vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 89001 revision: 24-nov-09 2 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms note (1) units mounted on recommended p.c.b. 1 oz. pad layout note (1) automotive grade electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit maximum instantaneous forward voltage (1) i f = 4.0 a i f = 8.0 a t a = 25 c v f 0.447 0.533 - 0.57 v i f = 4.0 a i f = 8.0 a t a = 125 c 0.357 0.472 - 0.49 maximum reverse current (2) v r = 30 v t a = 25 c t a = 125 c i r 55 24 200 35 a ma typical junction capacitance 4.0 v, 1 mhz c j 330 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss8p2l ss8p3l unit typical thermal resistance r ja (1) r jl 60 3.5 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode ss8p3l-m3/86a 0.10 86a 1500 7" diameter plastic tape and reel ss8p3l-m3/87a 0.10 87a 6500 13" diameter plastic tape and reel ss8p3lhm3/86a (1) 0.10 86a 1500 7" diameter plastic tape and reel ss8p3lhm3/87a (1) 0.10 87a 6500 13" diameter plastic tape and reel
new product ss8p2l, ss8p3l vishay general semiconductor document number: 89001 revision: 24-nov-09 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 3 ratings and characteristics curves (t a = 25 c unless otherwise noted) figure 1. maximum forward current derating curve figure 2. forward power loss characteristics figure 3. typical instantaneous forward characteristics 10 8 6 4 2 0 0 25 50 75 100 125 150 175 a v erage for w ard c u rrent (a) lead temperat u re (c) resisti v e or ind u cti v e load t l meas u red at the cathode band terminal 0 1 2 3 4 5 01234567 8 9 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = t p /t t p t 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0. 8 1.0 t a = 150 c t a = 125 c t a = 25 c instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) figure 4. typical reverse leakage characteristics figure 5. typical junction capacitance figure 6. typical transient thermal impedance 0.001 0.01 0.1 1 10 100 1000 10 20 30 40 50 60 70 8 0 90 100 t a = 150 c t a = 125 c t a = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) 100 1000 0.1 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p j u nction to am b ient 0.01 0.1 1 10 100 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w )
new product ss8p2l, ss8p3l vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 89001 revision: 24-nov-09 4 package outline dimensions in inches (millimeters) conform to jedec to-277a to-277a (smpc) 0.016 (0.40) 0.006 (0.15) 0.047 (1.20) 0.039 (1.00) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) 0.173 (4.40) 0.049 (1.24) 0.037 (0.94) 0.053 (1.35) 0.041 (1.05) 0.030 (0.75) nom. 0.084 (2.13) nom. 0.155 (3.94) nom. mounting pad layout 0.268 (6.80) 0.186 (4.72) min. 0.050 (1.27) min. 0.041 (1.04) 0.055 (1.40) min. 0.189 (4.80) min. 0.187 (4.75) 0.175 (4.45) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.171 (4.35) 0.167 (4.25) k 2 1
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